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| PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features Excellent thermal stability Common source configuration POUT = 6W with 15dB gain @ 945MHz / 28V New RF plastic package PowerSO-10RF (formed lead) Description The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006's superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-10RF (straight lead) Pin connection The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Source Gate Drain Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes Part number PD57006-E PD57006S-E PD57006TR-E PD57006STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Packing Tube Tube Tape and reel Tape and reel August 2006 Rev 1 1/22 www.st.com 22 Contents PD57006-E, PD57006S-E Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 5 6 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6.1 6.2 PD57006 (VDS = 13.5V IDS = 0.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD57006 (VDS = 28V IDS = 0.2A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 PD57006-E, PD57006S-E Electrical data 1 1.1 Electrical data Maximum ratings Table 1. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70C) Max. operating junction temperature Storage temperature Value 65 20 1 20 165 -65 to +150 Unit V V A W C C 1.2 Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 5 Unit C/W 3/22 Electrical characteristics PD57006-E, PD57006S-E 2 Electrical characteristics TCASE = +25 oC 2.1 Static Table 3. Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Static Test conditions ID = 10 mA VDS = 28 V VDS = 0 V ID = 70 mA ID = 0.5 A ID = 800 mA VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.58 27 14 0.9 2.0 Min 65 1 1 5.0 0.9 A A V V mho pF pF pF Typ Max Unit 2.2 Dynamic Table 4. Symbol POUT GP VDD = 28 V VDD = 28 V VDD = 28 V Dynamic Test conditions IDQ = 70 mA IDQ = 70 mA IDQ = 70 mA f = 945 MHz POUT = 6 W f = 945 MHz POUT = 6 W f = 945 MHz POUT = 6 W f = 945 MHz Min 6 14 45 10:1 15 50 Typ Max Unit W dB % VSWR D IDQ = 70 mA Load VDD = 28 V mismatch All phase angles 4/22 PD57006-E, PD57006S-E Impedance 3 Impedance Figure 1. Current conventions Table 5. Impedance data PD57006 PD57006S ZDL() 6.273 + j 8.729 6.578 + j 5.999 7.215 + j 7.539 Freq. (MHz) 925 945 960 ZIN () 3.794 - j 1.632 4.039 - j 2.300 4.250 - j 3.791 ZDL() 3.513 + j 10.81 3.862 + j 10.58 4.005 + j 11.34 Freq. (MHz) 925 945 960 ZIN () 6.040 - j 0.936 5.886 - j 2.326 6.056 - j 3.522 5/22 Typical performance PD57006-E, PD57006S-E 4 Figure 2. Typical performance Capacitance vs supply voltage Figure 3. Drain current vs gate source voltage 100 C , C A P A C IT A N C E S (p F ) Ciss 10 Coss 1 Crss f=1MHz 0.1 0 4 8 12 16 20 24 28 VDD, DRAIN VOLTAGE (V) Figure 4. Gate-source voltage vs case temperature VG S, G ATE-SO U R C E VO LTAG E(N orm alized) 1.06 1.04 1.02 1 0.98 Id=.2 A Id=1.5 A Id=1 A Id=.6 A 0.96 0.94 0.92 -25 Vds=10 V Id=.05 A 0 25 50 75 100 Tc, CASE TEMPERATURE (C) 6/22 PD57006-E, PD57006S-E Typical performance PD57006 Figure 5. Output power vs input power Figure 6. Input return loss vs output power 9 Pout, OU T PU T POW ER (W ) 8 7 6 5 4 3 2 1 0 0 0.1 0.2 Pin, INPUT POWER (W) 0.3 0.4 Vdd=28V Idq=70mA 960 MHz 945 MHz 925 MHz 0 Rtl, RETURN LOSS (dB) -5 945 MHz 960 MHz -10 -15 925 MHz -20 Vdd=28V Idq=70mA -25 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) Figure 7. Power gain vs output power Figure 8. Drain efficiency vs output power 18 Nd, D RAIN EFFIC IEN C Y (% ) 60 925 MHz 16 Pg, PO W ER G AIN (dB) 14 12 10 8 6 4 0 1 2 3 4 5 945 MHz 50 40 945 MHz 925 MHz 960 MHz 960 MHz 30 20 10 Vdd=28V Idq=70mA Vdd=28V Idq=70mA 6 7 8 9 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 7/22 Typical performance PD57006-E, PD57006S-E Figure 9. Output power vs drain voltage Figure 10. Drain efficiency vs bias current 10 N d, D R AIN EF F IC IEN C Y (% ) 60 945 MHz Pout, O UTPUT POWER (W) 8 6 925 MHz 945 MHz 960 MHz 50 925 MHz 40 30 20 10 960 MHz 4 2 0 0 100 200 300 400 IDQ, BIAS CURRENT (mA) Vdd=28V Pin= 23.6 dBm Vdd=28V Pin= 23.6 dBm 0 100 200 300 400 IDQ, BIAS CURRENT (mA) Figure 11. Output power vs supply voltage Figure 12. Drain efficiency vs supply voltage 8 945 MHz 60 N d, D R AIN EFF IC IEN C Y (% ) 925 MHz Pout, O U T PU T PO W ER (W ) 7 6 5 4 3 2 1 10 Idq=70 mA Pin= 23.6 dBm 925 MHz 960 MHz 50 945 MHz 40 30 20 10 960 MHz Idq= 70 mA Pin= 23.6 dBm 12 14 16 18 20 22 24 26 28 30 10 12 14 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) 8/22 PD57006-E, PD57006S-E Figure 13. Output power vs gate-source voltage Typical performance 9 P out, O U T P U T P O W E R (W ) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Vdd=28V Pin= 23.6 dBm 945 MHz 960 MHz 925 MHz PD57006S Figure 14. Output power vs input power 9 8 P o u t, O U T P U T P O W E R (W ) 7 6 5 4 3 2 1 0 0 0.1 0.2 Pin, INPUT POWER (W) 0.3 0.4 Vdd=28V Idq=70mA 945 MHz 925 MHz 960 MHz Figure 15. Input return loss vs output power 0 Vdd=28V Idq=70mA R tl, R E T U R N L O S S (d B ) -5 -10 925 MHz 945 MHz -15 960 MHz -20 -25 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) 9/22 Typical performance Figure 16. Power gain vs output power PD57006-E, PD57006S-E Figure 17. Drain efficiency vs output power 18 925 MHz 60 945 MHz N d , D R A IN E F F IC IE N C Y (% ) 16 P g , P O W E R G A IN (d B ) 14 12 10 8 6 4 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) Vdd=28V Idq=70mA 945 MHz 960 MHz 50 960 MHz 925 MHz 40 30 20 Vdd=28V Idq=70mA 10 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (W) Figure 18. Output power vs bias current 10 P o u t, O U T P U T P O W E R (W ) Figure 19. Drain efficiency vs bias current 60 945 MHz 8 925 MHz N d , D R A IN E F F IC IE N C Y (% ) 50 925 MHz 960 MHz 6 960 MHz 945 MHz 40 4 30 Vdd=28V Pin= 22.7 dBm 2 Vdd=28V Pin= 22.7 dBm 20 0 0 100 200 IDQ, BIAS CURRENT (mA) 300 400 10 0 100 200 IDQ, BIAS CURRENT (mA) 300 400 10/22 PD57006-E, PD57006S-E Figure 20. Output power vs supply voltage 8 P o u t, O U T P U T P O W E R (W ) 7 6 5 960 MHz 945 MHz 925 MHz Typical performance Figure 21. Drain efficiency vs supply voltage 60 960 MHz N d , D R A IN E F F IC IE N C Y (% ) 50 945 MHz 925 MHz 40 4 3 2 1 10 12 14 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (V) Idq=70 mA Pin= 22.7 dBm 30 Idq=70 mA Pin= 22.7 dBm 20 10 10 12 14 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (V) Figure 22. Output power vs gate-source voltage 9 8 P o u t, O U T P U T P O W E R (W ) 7 6 5 4 3 2 1 0 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Vdd=28V Pin= 22.7 dBm 945 MHz 960 MHz 925 MHz 11/22 Test circuit PD57006-E, PD57006S-E 5 Test circuit Figure 23. Test circuit schematic Table 6. B1, B2 Test circuit component part list SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446) R2 R3 R4 Z1 Z2 Z3 Z4 Z5 18 k CHIP RESISTOR 1 W 4.7 m CHIP RESISTOR 1 W 12 k CHIP RESISTOR 1 W 0.430" X 0.084" MICROSTRIP 0.1.186" X 1.120" MICROSTRIP 1.273" X 0.565" MICROSTRIP 0.770" X 0.171" MICROSTRIP 0.880" X 0.105" MICROSTRIP C1, C2, C11, 47 pF, 100B ATC CHIP C14 CAPACITOR C5 C4, C12 C3, C13 C10 C9 C7, C8 1000 pF, 100B ATC CHIP CAPACITOR .01 F, VENKEL CHIP CAPACITOR 220 F, 63 V ELECTROLYTIC CAPACITOR 100 pF, 100B ATC CHIP CAPACITOR 6.2 pF, 100B ATC CHIP CAPACITOR 08-8 pF VARIABLE CAPACITOR JOHANSON 15 nH, 3 TURN, .140" DIA. 22 AWG BELDEN 8021 BLIS PER WIRE TYPE N FLANGE MOUNT 100 CHIP RESISTOR 1 W L1 Z6 1.200" X 0.084" MICROSTRIP ROGER ULTRA LAM 2000 THK 0.030" r = 2.55 2oz ED Cu BOTH SIDES N1, N2 R1 BOARD 12/22 PD57006-E, PD57006S-E Figure 24. Test circuit photomaster Test circuit 6.4 inches Figure 25. Test circuit Table 7. Z1 Z2 Z3 Transmission line dimensions 0.430" X 0.084" MICROSTRIP 0.220" X 0.155" MICROSTRIP 0.960" X 0.120" MICROSTRIP Z4 Z5 Z6 1.273" X 0.565" MICROSTRIP 0.195" X 0.250" MICROSTRIP 0.555" X 0.171" MICROSTRIP Z7 Z8 Z8 0.778" X 0.150" MICROSTRIP 0.120" X 0.171" MICROSTRIP 1.200" X 0.084" MICROSTRIP 4 inches 13/22 Common source s-parameter PD57006-E, PD57006S-E 6 6.1 Common source s-parameter PD57006 (VDS = 13.5V IDS = 0.2A) Table 8. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS11I 0.895 0.786 0.765 0.767 0.778 0.790 0.794 0.806 0.814 0.826 0.836 0.843 0.850 0.857 0.863 0.869 0.869 0.872 0.875 0.873 0.875 0.872 0.871 0.864 0.861 0.855 0.847 0.835 0.818 0.797 S11 -79 -118 -134 -143 -151 -156 -159 -162 -165 -167 -170 -172 -174 -176 -178 -180 178 177 175 173 172 170 168 166 164 163 160 158 156 153 IS21I 29.76 18.68 12.61 9.22 7.50 6.09 5.23 4.39 3.82 3.30 2.90 2.59 2.32 2.09 1.91 1.76 1.61 1.50 1.40 1.32 1.24 1.18 1.12 1.08 1.03 1.00 0.96 0.93 0.89 0.88 S21 130 102 90 80 73 66 59 54 48 43 38 34 31 27 23 20 16 13 10 7 3 0 -4 -7 -11 -15 -19 -23 -27 -31 IS12I 0.033 0.041 0.042 0.041 0.041 0.038 0.038 0.036 0.035 0.033 0.031 0.029 0.028 0.027 0.025 0.024 0.023 0.022 0.020 0.020 0.019 0.019 0.018 0.017 0.016 0.016 0.015 0.015 0.015 0.016 S12 39 13 2 -8 -15 -22 -28 -32 -37 -41 -45 -49 -53 -56 -59 -62 -64 -68 -72 -75 -78 -81 -86 -92 -97 -102 -108 -111 -120 -128 IS22I 0.814 0.699 0.621 0.629 0.629 0.650 0.685 0.700 0.724 0.749 0.771 0.785 0.803 0.814 0.829 0.839 0.847 0.859 0.868 0.873 0.885 0.886 0.889 0.890 0.895 0.896 0.895 0.897 0.896 0.899 S22 -70 -106 -121 -132 -136 -141 -143 -147 -149 -152 -154 -1564 -158 -1598 -162 -163 -165 -166 -168 -169 -171 -172 -174 -175 -177 -178 -180 179 178 177 14/22 PD57006-E, PD57006S-E Common source s-parameter 6.2 PD57006 (VDS = 28V IDS = 0.2A) Table 9. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 S-parameter IS11I 0.953 0.855 0.823 0.818 0.824 0.832 0.835 0.845 0.850 0.860 0.866 0.870 0.878 0.883 0.887 0.890 0.890 0.888 0.892 0.894 0.892 0.888 0.885 0.880 0.872 0.864 0.856 0.844 0.824 0.806 S11 -65 -104 -124 -136 -144 -150 -155 -159 -162 -165 -168 -170 -172 -174 -177 -179 179 178 176 174 172 170 169 167 165 163 161 159 156 154 IS21I 31.01 21.59 15.49 11.84 9.54 7.85 6.48 5.51 4.69 4.11 3.58 3.21 2.88 2.60 2.37 2.16 1.98 1.82 1.69 1.57 1.47 1.36 1.28 1.21 1.16 1.11 1.09 1.06 1.06 1.04 S21 138 112 96 85 75 67 59 53 4 43 38 33 29 25 21 17 13 9 6 3 0 -3 -6 -9 -11 -14 -17 -20 -23 -29 IS12I 0.022 0.030 0.031 0.031 0.031 0.029 0.029 0.027 0.025 0.024 0.023 0.021 0.019 0.019 0.016 0.017 0.015 0.014 0.013 0.013 0.011 0.011 0.010 0.009 0.009 0.008 0.007 0.007 0.007 0.008 S12 48 20 7 -5 -12 -19 -25 -31 -36 -41 -44 -48 -53 -53 -59 -60 -62 -67 -70 -72 -76 -80 -86 -89 -95 -103 -110 -118 -129 -143 IS22I 0.780 0.677 0.601 0.605 0.614 0.635 0.676 0.696 0.722 0.748 0.773 0.790 0.808 0.821 0.838 0.846 0.856 0.869 0.879 0.886 0.892 0.894 0.899 0.897 0.901 0.906 0.905 0.905 0.906 0.910 S22 -52 -85 -101 -113 -118 -126 -129 -134 -137 -141 -144 -147 -150 -152 -154 -156 -158 -160 -162 -163 -165 -166 -168 -170 -171 -173 -174 -176 -177 -178 15/22 Package mechanical data PD57006-E, PD57006S-E 7 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 16/22 PD57006-E, PD57006S-E Table 10. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G L R1 R2 T T1 T2 2 deg 0.8 5 deg 6 deg 10 deg 8 deg 2 deg 0.8 5.4 0.23 9.4 7.4 13.85 9.3 7.3 5.9 0 3.4 1.2 0.15 Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data mm. Typ. 0.05 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 14.1 9.4 7.4 6.1 0.5 1.2 1 1.1 0.25 0.031 5 deg 6 deg 10 deg 8 deg 0.030 5.65 0.32 9.6 7.6 14.35 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.544 0.365 0.286 0.231 Max. 0.1 3.6 1.4 0.25 Min. 0. 0.134 0.046 0.005 Inch Typ. 0.0019 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.555 0.37 0.292 0.24 0.019 0.047 0.039 0.042 0.01 0.221 0.012 0.377 0.298 0.565 0.375 0.294 0.247 Max. 0.0038 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 26. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 17/22 Package mechanical data Table 11. Dim. Min. A1 A2 A3 A4 a b c D D1 E E1 E2 E3 F G R1 R2 T1 T2 0.8 6 deg 10 deg 5.4 0.23 9.4 7.4 15.15 9.3 7.3 5.9 1.62 3.4 1.2 0.15 PD57006-E, PD57006S-E PowerSO-10RF Straight Lead Mechanical data mm. Typ. 1.67 3.5 1.3 0.2 0.2 5.53 0.27 9.5 7.5 15.4 9.4 7.4 6.1 0.5 1.2 0.25 0.031 6 deg 10 deg 5.65 0.32 9.6 7.6 15.65 9.5 7.5 6.3 0.212 0.008 0.370 0.290 0.595 0.365 0.286 0.231 Max. 1.72 3.6 1.4 0.25 Min. 0.064 0.134 0.046 0.005 Inch Typ. 0.065 0.137 0.05 0.007 0.007 0.217 0.01 0.374 0.295 0.606 0.37 0.292 0.24 0.019 0.047 0.01 0.221 0.012 0.377 0.298 0.615 0.375 0.294 0.247 Max. 0.068 0.142 0.054 0.009 Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 27. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 18/22 PD57006-E, PD57006S-E Figure 28. Tube information Package mechanical data 19/22 Package mechanical data Figure 29. Reel information PD57006-E, PD57006S-E 20/22 PD57006-E, PD57006S-E Revision history 8 Revision history Table 12. Date 07-Aug-2006 Revision history Revision 1 Initial release. Changes 21/22 PD57006-E, PD57006S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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